Description
Transistor Bipolar
Place of Origin
Guangdong, China
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
--
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Mounting Type
Through Hole
Resistor - Emitter Base (R2)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
--
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Kolektor-emitor voltase VCEO Max
45 V
VCBO tegangan dasar kolektor
-
Vibo tegangan Dasar pemancar
5 V
Tegangan saturasi pemancar Kolektor
700 mV
Arus pengumpul DC maksimum
800 mA
Pembuangan tenaga Pd
625 mW
Dapatkan Bandwidth produk fT
100 MHz
Kolektor DC/tangkapan dasar hfe Min
-55 C
Suhu operasi maksimum
+ 150 C
